N-Channel MOSFET, 80 A, 100 V, 3-Pin D2PAK Infineon IPB083N10N3GATMA1

RS Stock No.:: 897-7361
Mfr. Part No.:: IPB083N10N3GATMA1
Manufacturer:: Infineon

N-Channel MOSFET, 80 A, 100 V, 3-Pin D2PAK Infineon IPB083N10N3GATMA1

This image is representative of the product range

Bulk discount available

Price Each (In a Pack of 8)

PHP87.48

(exc. VAT)

PHP97.98

(inc. VAT)

416 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per Unit	Per Pack**
8 - 32	PHP87.48	PHP699.84
40 - 152	PHP84.855	PHP678.84
160 - 392	PHP79.764	PHP638.112
400 - 792	PHP72.585	PHP580.68
800 +	PHP63.875	PHP511.00

**price indicative

RS Stock No.:: 897-7361
Mfr. Part No.:: IPB083N10N3GATMA1
Manufacturer:: Infineon

IPP086N10N3 G, IPI086N10N3 G, IPB083N10N3 G, IPD082N10N3 G, OptiMOS3 Power MOSFET Transistor
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	80 A
Maximum Drain Source Voltage	100 V
Series	OptiMOS™ 3
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	15.1 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	125 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	9.45mm
Typical Gate Charge @ Vgs	42 nC @ 10 V
Length	10.31mm
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Forward Diode Voltage	1.2V
Height	4.57mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 80 A, 100 V, 3-Pin D2PAK Infineon IPB083N10N3GATMA1

Infineon OptiMOS™3 Power MOSFETs, 100V and over

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