Infineon OptiMOS 3 Type N-Channel MOSFET, 80 A, 100 V Enhancement, 3-Pin TO-263 IPB083N10N3GATMA1

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PHP909.792

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PHP1,018.968

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8 - 32PHP113.724PHP909.79
40 - 152PHP110.311PHP882.49
160 - 392PHP103.693PHP829.54
400 - 792PHP94.36PHP754.88
800 +PHP83.038PHP664.30

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Packaging Options:
RS Stock No.:
897-7361
Mfr. Part No.:
IPB083N10N3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

100V

Series

OptiMOS 3

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

15.1mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

125W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

42nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

4.57mm

Width

9.45 mm

Length

10.31mm

Automotive Standard

No

RoHS Status: Not Applicable

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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