Infineon HEXFET Type N-Channel MOSFET, 128 A, 75 V, 3-Pin TO-263
- RS Stock No.:
- 218-3117
- Mfr. Part No.:
- IRFS3307ZTRRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 800 units)*
PHP62,751.20
(exc. VAT)
PHP70,281.60
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 1,600 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 800 - 800 | PHP78.439 | PHP62,751.20 |
| 1600 - 1600 | PHP76.086 | PHP60,868.80 |
| 2400 + | PHP73.803 | PHP59,042.40 |
*price indicative
- RS Stock No.:
- 218-3117
- Mfr. Part No.:
- IRFS3307ZTRRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 128A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.8mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Maximum Power Dissipation Pd | 230W | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Width | 4.83 mm | |
| Height | 9.65mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 128A | ||
Maximum Drain Source Voltage Vds 75V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.8mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Maximum Power Dissipation Pd 230W | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Width 4.83 mm | ||
Height 9.65mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon HEXFET series single N-Channel Power MOSFET integrated with D2PAK (TO-263) type package.
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Related links
- Infineon HEXFET Type N-Channel MOSFET 75 V, 3-Pin TO-263 IRFS3307ZTRRPBF
- Infineon HEXFET Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-263 IRFS3307ZTRLPBF
- Infineon HEXFET Type N-Channel Power MOSFET 75 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 75 V, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 75 V, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 75 V, 7-Pin TO-263