Infineon HEXFET Type N-Channel MOSFET, 170 A, 75 V TO-263

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Subtotal (1 reel of 800 units)*

PHP80,908.80

(exc. VAT)

PHP90,617.60

(inc. VAT)

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Units
Per Unit
Per Reel*
800 - 800PHP101.136PHP80,908.80
1600 - 1600PHP97.247PHP77,797.60
2400 +PHP96.016PHP76,812.80

*price indicative

RS Stock No.:
217-2631
Mfr. Part No.:
IRFS3207ZTRRPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

170A

Maximum Drain Source Voltage Vds

75V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Maximum Drain Source Resistance Rds

4.1mΩ

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

170nC

Maximum Power Dissipation Pd

300W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

10.67mm

Width

4.83 mm

Height

9.65mm

Automotive Standard

No

The Infineon 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package.

Improved Gate, Avalanche and Dynamic dv/dt Ruggedness

Fully Characterized Capacitance and Avalanche SOA

Enhanced body diode dV/dt and dI/dt Capability

Lead-Free

RoHS Compliant, Halogen-Free

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