Infineon HEXFET Type N-Channel MOSFET, 170 A, 75 V TO-252

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Subtotal (1 reel of 800 units)*

PHP90,178.40

(exc. VAT)

PHP101,000.00

(inc. VAT)

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  • 1,600 unit(s) ready to ship from another location
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Units
Per Unit
Per Reel*
800 - 800PHP112.723PHP90,178.40
1600 - 1600PHP108.389PHP86,711.20
2400 +PHP107.015PHP85,612.00

*price indicative

RS Stock No.:
217-2628
Mfr. Part No.:
IRFS3207TRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

170A

Maximum Drain Source Voltage Vds

75V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Maximum Drain Source Resistance Rds

4.5mΩ

Typical Gate Charge Qg @ Vgs

260nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

300W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

9.65mm

Width

4.83 mm

Standards/Approvals

No

Length

10.67mm

Automotive Standard

No

The Infineon 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package.

Improved Gate Avalanche and Dynamic dV/dt Ruggedness

Fully Characterized Capacitance and Avalanche SOA

Enhanced body diode dV/dt and dI/dt Capability

Lead-Free

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