Infineon HEXFET Type N-Channel MOSFET, 128 A, 75 V, 3-Pin TO-263 IRFS3307ZTRRPBF

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Subtotal (1 pack of 10 units)*

PHP1,263.24

(exc. VAT)

PHP1,414.83

(inc. VAT)

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Units
Per Unit
Per Pack*
10 - 10PHP126.324PHP1,263.24
20 - 90PHP122.534PHP1,225.34
100 - 240PHP118.857PHP1,188.57
250 - 490PHP115.292PHP1,152.92
500 +PHP111.834PHP1,118.34

*price indicative

Packaging Options:
RS Stock No.:
218-3118
Mfr. Part No.:
IRFS3307ZTRRPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

128A

Maximum Drain Source Voltage Vds

75V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

5.8mΩ

Maximum Power Dissipation Pd

230W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

110nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

9.65mm

Length

10.67mm

Width

4.83 mm

Automotive Standard

No

The Infineon HEXFET series single N-Channel Power MOSFET integrated with D2PAK (TO-263) type package.

Fully Characterized Capacitance and Avalanche SOA

Enhanced body diode dV/dt and dI/dt Capability

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