Infineon HEXFET Type N-Channel MOSFET, 170 A, 75 V, 3-Pin TO-263 IRF2907ZSTRLPBF

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Subtotal (1 pack of 5 units)*

PHP1,256.73

(exc. VAT)

PHP1,407.54

(inc. VAT)

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  • 3,120 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
5 - 5PHP251.346PHP1,256.73
10 - 95PHP243.804PHP1,219.02
100 - 245PHP236.486PHP1,182.43
250 - 495PHP229.392PHP1,146.96
500 +PHP222.512PHP1,112.56

*price indicative

Packaging Options:
RS Stock No.:
214-4446
Mfr. Part No.:
IRF2907ZSTRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

170A

Maximum Drain Source Voltage Vds

75V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4.5mΩ

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

300W

Typical Gate Charge Qg @ Vgs

270nC

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

This Infineon HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. It has fast switching speed and improved repetitive avalanche rating.

It is Lead-free

It is capable of being wave soldered

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