Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-252 IPD60R280P7SAUMA1

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PHP752.40

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PHP842.70

(inc. VAT)

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Per Pack*
15 - 15PHP50.16PHP752.40
30 - 75PHP45.993PHP689.90
90 - 225PHP42.398PHP635.97
240 - 465PHP39.381PHP590.72
480 +PHP38.303PHP574.55

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Packaging Options:
RS Stock No.:
218-3051
Mfr. Part No.:
IPD60R280P7SAUMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-252

Series

600V CoolMOS P7

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

280mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

53W

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

18nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

2.41mm

Length

6.73mm

Width

6.22 mm

Automotive Standard

No

The Infineon 600V CoolMOS™ P7 series N-channel power MOSFET. It has extremely low switching and conduction losses which makes switching applications even more efficient, more compact and much cooler.

Significant reduction of switching and conduction losses

Suitable for hard and soft switching

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