Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-263
- RS Stock No.:
- 214-4369
- Mfr. Part No.:
- IPB60R280P7ATMA1
- Manufacturer:
- Infineon
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Units | Per Unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | PHP74.756 | PHP74,756.00 |
| 2000 - 2000 | PHP72.513 | PHP72,513.00 |
| 3000 + | PHP70.338 | PHP70,338.00 |
*price indicative
- RS Stock No.:
- 214-4369
- Mfr. Part No.:
- IPB60R280P7ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-263 | |
| Series | 600V CoolMOS P7 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 53W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.02mm | |
| Height | 4.5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-263 | ||
Series 600V CoolMOS P7 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 53W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.02mm | ||
Height 4.5mm | ||
Automotive Standard No | ||
Infineon 600V CoolMOS P7 Series MOSFET, 600V Drain Source Voltage, 12A Continuous Drain Current - IPB60R280P7ATMA1
This MOSFET is a high-voltage N-channel enhancement device engineered for power switching in demanding electronic systems. It operates across a wide temperature range and is intended for surface-mounted applications where robust voltage handling and controlled gate drive are required. The component suits designs that require high-voltage blocking, moderate conduction current and compact mounting.
Features and Benefits:
• 600V drain-source rating for high-voltage switching capability
• 12A continuous drain current for sustained load handling
• 280 mΩ Rds(on) for efficient conduction at normal operating conditions
• 18 nC typical gate charge for predictable switching energy
• 53W maximum power dissipation for thermal margin in power stages
• 20V gate tolerance for compatibility with common gate drivers
• 12A continuous drain current for sustained load handling
• 280 mΩ Rds(on) for efficient conduction at normal operating conditions
• 18 nC typical gate charge for predictable switching energy
• 53W maximum power dissipation for thermal margin in power stages
• 20V gate tolerance for compatibility with common gate drivers
Applications
• Suitable for offline power supplies and SMPS primary switches
• Ideal for high-voltage DC-DC converters and power modules
• Used with rectifier and snubber networks in power conditioning
• Can be used for industrial motor-drive front-ends
• Used for telecoms power systems requiring space-efficient mounting
• Ideal for high-voltage DC-DC converters and power modules
• Used with rectifier and snubber networks in power conditioning
• Can be used for industrial motor-drive front-ends
• Used for telecoms power systems requiring space-efficient mounting
What package and mounting approach does it require?
It is supplied in a TO-263 package designed for surface-mount assembly to provide low-profile board integration and efficient board-level thermal conduction.
What thermal limits govern its use in high-temperature environments?
The device is rated to operate between -55 °C and 150 °C, defining allowable ambient and junction conditions for reliable operation within that span.
How does the gate specification influence external driver selection?
With a maximum gate-source voltage of 20V, drivers should keep peak Vgs within this boundary and account for the 18 nC typical gate charge when sizing drive current for the desired switching speed.
What conduction behaviour should designers anticipate under continuous load?
Expect continuous drain currents up to 12 A, with conduction losses influenced by the specified 280 mΩ on-resistance and overall board thermal design.
Related links
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 IPB60R280P7ATMA1
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- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V N, 3-Pin TO-220 IPA60R280P7SXKSA1
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263