Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 1000 units)*

PHP50,568.00

(exc. VAT)

PHP56,636.00

(inc. VAT)

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1000 - 1000PHP50.568PHP50,568.00
2000 - 2000PHP49.051PHP49,051.00
3000 +PHP47.579PHP47,579.00

*price indicative

RS Stock No.:
214-4371
Mfr. Part No.:
IPB60R360P7ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

600V CoolMOS P7

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

360mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

41W

Typical Gate Charge Qg @ Vgs

13nC

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

9.27 mm

Standards/Approvals

No

Length

10.02mm

Height

4.5mm

Automotive Standard

No

This Infineon 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS™ 7th generation platform ensure its high efficiency.

It has rugged body diode

Integrated RG reduces MOSFET oscillation sensitivity

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