Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin TO-220 IPA60R360P7SXKSA1
- RS Stock No.:
- 215-2480
- Mfr. Part No.:
- IPA60R360P7SXKSA1
- Manufacturer:
- Infineon
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Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 20 | PHP45.54 | PHP910.80 |
| 40 - 80 | PHP41.77 | PHP835.40 |
| 100 - 220 | PHP38.554 | PHP771.08 |
| 240 - 480 | PHP35.789 | PHP715.78 |
| 500 + | PHP34.784 | PHP695.68 |
*price indicative
- RS Stock No.:
- 215-2480
- Mfr. Part No.:
- IPA60R360P7SXKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | 600V CoolMOS P7 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 22W | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series 600V CoolMOS P7 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 22W | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon 600V CoolMOS P7 Series MOSFET, 600V Drain Source Voltage, 9A Continuous Drain Current - IPA60R360P7SXKSA1
This MOSFET is a high-voltage switching transistor designed for power-conversion roles in demanding electronic systems. It operates across a wide temperature span and is built for through-hole mounting in conventional assembly workflows, providing a compact solution for circuits that require a robust N-channel enhancement device with a high drain-to-source voltage rating.
Features and Benefits:
• 600V drain tolerance enables high-voltage switching applications
• 9A continuous drain current supports medium-power loads
• 360mΩ Rds(on) reduces conduction losses at operating current
• 22W power dissipation allows sustained thermal loading
• 13nC typical gate charge ensures efficient drive requirements
• 0.9V forward voltage minimises diode conduction drop
• 9A continuous drain current supports medium-power loads
• 360mΩ Rds(on) reduces conduction losses at operating current
• 22W power dissipation allows sustained thermal loading
• 13nC typical gate charge ensures efficient drive requirements
• 0.9V forward voltage minimises diode conduction drop
Applications
• Suitable for industrial high-voltage power supplies
• Ideal for switch-mode power conversion topologies
• Used for hard‑switching in inverter stages
• Can be used for mains-side power factor correction
• Used with heat-sinked assemblies in power modules
• Ideal for switch-mode power conversion topologies
• Used for hard‑switching in inverter stages
• Can be used for mains-side power factor correction
• Used with heat-sinked assemblies in power modules
What package and mounting method does it use?
It is supplied in a TO-220 package and intended for through-hole mounting to provide secure mechanical and thermal connection.
What gate and thermal limits must a designer observe?
The gate may be driven up to 20V relative to source and the device should be cooled to handle up to 22W dissipation within its operating temperature range.
What temperature range can it tolerate during operation?
It is rated to operate across a low of -55°C up to a high of 150°C for a wide variety of thermal environments.
What conduction mode and channel type are provided?
The component is an N-channel enhancement-mode device suited to standard transistor switching topologies.
Related links
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 IPB60R360P7ATMA1
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 IPD60R360P7ATMA1
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263