Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 214-4387
- Mfr. Part No.:
- IPD60R360P7ATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 2500 units)*
PHP92,292.50
(exc. VAT)
PHP103,367.50
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from May 01, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | PHP36.917 | PHP92,292.50 |
| 5000 - 5000 | PHP35.81 | PHP89,525.00 |
| 7500 + | PHP34.735 | PHP86,837.50 |
*price indicative
- RS Stock No.:
- 214-4387
- Mfr. Part No.:
- IPD60R360P7ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | 600V CoolMOS P7 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 41W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.65mm | |
| Width | 6.42 mm | |
| Standards/Approvals | No | |
| Height | 2.35mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series 600V CoolMOS P7 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 41W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 6.65mm | ||
Width 6.42 mm | ||
Standards/Approvals No | ||
Height 2.35mm | ||
Automotive Standard No | ||
This Infineon 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS™ 7th generation platform ensure its high efficiency.
It has rugged body diode
Integrated RG reduces MOSFET oscillation sensitivity
Related links
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 IPD60R360P7ATMA1
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 IPB60R360P7ATMA1
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 IPA60R360P7SXKSA1
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 IPD60R180P7ATMA1
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252