Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 18 A, 600 V Enhancement, 3-Pin TO-252 IPD60R180P7ATMA1

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PHP769.12

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PHP861.41

(inc. VAT)

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Per Pack*
10 - 10PHP76.912PHP769.12
20 - 90PHP70.509PHP705.09
100 - 240PHP65.092PHP650.92
250 - 490PHP60.413PHP604.13
500 +PHP58.772PHP587.72

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Packaging Options:
RS Stock No.:
214-4384
Mfr. Part No.:
IPD60R180P7ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-252

Series

600V CoolMOS P7

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

180mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

25nC

Maximum Power Dissipation Pd

72W

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Length

6.65mm

Height

2.35mm

Standards/Approvals

No

Automotive Standard

No

This Infineon 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS™ 7th generation platform ensure its high efficiency.

It has rugged body diode

Integrated RG reduces MOSFET oscillation sensitivity

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