Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 18 A, 600 V Enhancement, 3-Pin TO-220

This image is representative of the product range

Bulk discount available

Subtotal (1 tube of 50 units)*

PHP4,059.00

(exc. VAT)

PHP4,546.00

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 300 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Tube*
50 - 100PHP81.18PHP4,059.00
150 - 200PHP78.745PHP3,937.25
250 +PHP76.382PHP3,819.10

*price indicative

RS Stock No.:
214-4415
Mfr. Part No.:
IPP60R180P7XKSA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220

Series

600V CoolMOS P7

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

180mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

25nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

72W

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Width

15.93 mm

Height

4.4mm

Length

10.2mm

Standards/Approvals

No

Automotive Standard

No

The 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS™ 7th generation platform ensure its high efficiency.

It has rugged body diode

Integrated RG reduces MOSFET oscillation sensitivity

Related links