Infineon N Channel Mosfet OptiMOS 2 Type N-Channel MOSFET, 50 A, 25 V Enhancement, 8-Pin Power Block 5x6 BSG0811NDATMA1
- RS Stock No.:
- 215-2467
- Mfr. Part No.:
- BSG0811NDATMA1
- Manufacturer:
- Infineon
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Subtotal (1 pack of 10 units)*
PHP824.60
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PHP923.60
(inc. VAT)
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP82.46 | PHP824.60 |
| 20 - 90 | PHP80.399 | PHP803.99 |
| 100 - 240 | PHP78.389 | PHP783.89 |
| 250 - 490 | PHP76.429 | PHP764.29 |
| 500 + | PHP74.517 | PHP745.17 |
*price indicative
- RS Stock No.:
- 215-2467
- Mfr. Part No.:
- BSG0811NDATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | Power Block 5x6 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.84V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 8.4nC | |
| Maximum Gate Source Voltage Vgs | 4.5 V | |
| Maximum Power Dissipation Pd | 6.25W | |
| Transistor Configuration | N Channel Mosfet | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Length | 5.1mm | |
| Standards/Approvals | JEDEC, RoHS, IEC61249-2-21 | |
| Width | 6.1 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type Power Block 5x6 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.84V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 8.4nC | ||
Maximum Gate Source Voltage Vgs 4.5 V | ||
Maximum Power Dissipation Pd 6.25W | ||
Transistor Configuration N Channel Mosfet | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Length 5.1mm | ||
Standards/Approvals JEDEC, RoHS, IEC61249-2-21 | ||
Width 6.1 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Infineon OptiMOS™ 5 Power Block is a leadless SMD package in a 5.0x6.0mm² package outline, including a low-side and a high-side MOSFET in a synchronous buck converter configuration. By replacing two separate discrete packages, such as SO8 or SuperSO8, with the OptiMOS™ 5 Power Block, customers can shrink their designs up to 85%. Standardizing power packages benefits the customer, as the number of different package outlines available in the market place is minimized.
50A max average load current
Source-down low side MOSFET for better PCB cooling
Internally connected low-side and high side (lowest loop inductance)
High side Kelvin connection for more efficient driving
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