Infineon N Channel Mosfet OptiMOS 2 Type N-Channel MOSFET, 50 A, 25 V Enhancement, 8-Pin Power Block 5x6

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PHP300,960.00

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PHP337,075.00

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5000 - 5000PHP60.192PHP300,960.00
10000 - 10000PHP57.877PHP289,385.00
15000 +PHP57.144PHP285,720.00

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RS Stock No.:
215-2466
Mfr. Part No.:
BSG0811NDATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

25V

Package Type

Power Block 5x6

Series

OptiMOS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

8.4nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

4.5 V

Maximum Power Dissipation Pd

6.25W

Forward Voltage Vf

0.84V

Maximum Operating Temperature

150°C

Transistor Configuration

N Channel Mosfet

Height

1.1mm

Standards/Approvals

JEDEC, RoHS, IEC61249-2-21

Width

6.1 mm

Length

5.1mm

Number of Elements per Chip

2

Automotive Standard

No

The Infineon OptiMOS™ 5 Power Block is a leadless SMD package in a 5.0x6.0mm² package outline, including a low-side and a high-side MOSFET in a synchronous buck converter configuration. By replacing two separate discrete packages, such as SO8 or SuperSO8, with the OptiMOS™ 5 Power Block, customers can shrink their designs up to 85%. Standardizing power packages benefits the customer, as the number of different package outlines available in the market place is minimized.

50A max average load current

Source-down low side MOSFET for better PCB cooling

Internally connected low-side and high side (lowest loop inductance)

High side Kelvin connection for more efficient driving

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