Infineon OptiMOS 2 Type N-Channel MOSFET, 1.4 A, 30 V Enhancement, 3-Pin SOT-23
- RS Stock No.:
- 826-9412
- Mfr. Part No.:
- BSS316NH6327XTSA1
- Manufacturer:
- Infineon
This image is representative of the product range
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Subtotal (1 reel of 250 units)*
PHP1,064.25
(exc. VAT)
PHP1,192.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 250 unit(s) ready to ship from another location
- Plus 7,000 unit(s) shipping from January 02, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 250 - 250 | PHP4.257 | PHP1,064.25 |
| 500 - 1000 | PHP4.129 | PHP1,032.25 |
| 1250 - 2250 | PHP3.964 | PHP991.00 |
| 2500 + | PHP3.766 | PHP941.50 |
*price indicative
- RS Stock No.:
- 826-9412
- Mfr. Part No.:
- BSS316NH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | OptiMOS 2 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.6nC | |
| Forward Voltage Vf | 0.8V | |
| Maximum Power Dissipation Pd | 500mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.9mm | |
| Length | 2.9mm | |
| Width | 1.3 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series OptiMOS 2 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.6nC | ||
Forward Voltage Vf 0.8V | ||
Maximum Power Dissipation Pd 500mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 0.9mm | ||
Length 2.9mm | ||
Width 1.3 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS™2 Power MOSFET Family
Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
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