Infineon OptiMOS 2 Type N-Channel MOSFET, 2.3 A, 20 V Enhancement, 3-Pin SOT-23 BSS806NEH6327XTSA1
- RS Stock No.:
- 165-5871
- Mfr. Part No.:
- BSS806NEH6327XTSA1
- Manufacturer:
- Infineon
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Subtotal (1 reel of 3000 units)*
PHP18,600.00
(exc. VAT)
PHP20,820.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
- Plus 9,000 unit(s) shipping from August 10, 2026
Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 + | PHP6.20 | PHP18,600.00 |
*price indicative
- RS Stock No.:
- 165-5871
- Mfr. Part No.:
- BSS806NEH6327XTSA1
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.3A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | OptiMOS 2 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 82mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 1.7nC | |
| Forward Voltage Vf | 0.82V | |
| Maximum Power Dissipation Pd | 500mW | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 2.9mm | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.3A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series OptiMOS 2 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 82mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 1.7nC | ||
Forward Voltage Vf 0.82V | ||
Maximum Power Dissipation Pd 500mW | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 2.9mm | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Infineon OptiMOS 2 Series MOSFET, 20V Maximum Drain Source Voltage, 2.3A Maximum Continuous Drain Current - BSS806NEH6327XTSA1
Features and Benefits:
• 20V drain-source rating enables safe low-voltage switching
• 2.3A continuous current supports moderate load currents
• 1.7nC gate charge enables quick gate-drive transitions
• 500mW power dissipation limits thermal stress in tight layouts
• Gate tolerated up to 8V for flexible drive voltages
Applications
• Ideal for DC-DC converters in compact assemblies
• Used with microcontroller outputs for low-voltage switching
• Can be used for load switching in automotive electronics
• Used for signal-level power control in embedded systems
What package and mounting style does it use?
What temperature conditions can it withstand during operation?
How many pins are available and what is the channel type?
What is the typical forward/bulk diode characteristic?
Related links
- Infineon OptiMOS 2 Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Infineon OptiMOS 2 Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 BSS806NH6327XTSA1
- Infineon OptiMOS 2 Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
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- Infineon OptiMOS 2 Type N-Channel MOSFET 20 V Enhancement, 6-Pin SOT-363
- Infineon OptiMOS 2 Type N-Channel MOSFET 20 V Enhancement, 6-Pin SOT-363 BSD214SNH6327XTSA1
