Infineon OptiMOS 2 Type N-Channel MOSFET, 2.5 A, 20 V Enhancement, 3-Pin SOT-23 BSS205NH6327XTSA1

RS Stock No.:: 892-2374
Mfr. Part No.:: BSS205NH6327XTSA1
Manufacturer:: Infineon

Infineon OptiMOS 2 Type N-Channel MOSFET, 2.5 A, 20 V Enhancement, 3-Pin SOT-23 BSS205NH6327XTSA1

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Subtotal (1 pack of 100 units)*

PHP881.10

(exc. VAT)

PHP986.80

(inc. VAT)

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In Stock

5,600 unit(s) ready to ship from another location

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Units	Per Unit	Per Pack*
100 - 100	PHP8.811	PHP881.10
200 - 400	PHP8.426	PHP842.60
500 - 900	PHP8.046	PHP804.60
1000 - 1900	PHP7.897	PHP789.70
2000 +	PHP7.452	PHP745.20

*price indicative

RS Stock No.:: 892-2374
Mfr. Part No.:: BSS205NH6327XTSA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	2.5A
	Maximum Drain Source Voltage Vds	20V
	Package Type	SOT-23
	Series	OptiMOS 2
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	85mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	2.1nC
	Maximum Power Dissipation Pd	500mW
	Maximum Gate Source Voltage Vgs	12 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.1V
	Maximum Operating Temperature	150°C
	Length	2.9mm
	Width	0.1 mm
	Standards/Approvals	No
	Height	1.3mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 2.5A
	Maximum Drain Source Voltage Vds 20V
	Package Type SOT-23
	Series OptiMOS 2
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 85mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 2.1nC
	Maximum Power Dissipation Pd 500mW
	Maximum Gate Source Voltage Vgs 12 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.1V
	Maximum Operating Temperature 150°C
	Length 2.9mm
	Width 0.1 mm
	Standards/Approvals No
	Height 1.3mm
	Automotive Standard AEC-Q101

Infineon OptiMOS™ 2 Series MOSFET, 2.5A Maximum Continuous Drain Current, 500 mW Maximum Power Dissipation - BSS205NH6327XTSA1

This N-channel MOSFET is a VITAL component in contemporary electronic applications, especially in automation and automotive sectors. Designed for efficient switching applications, it features a Compact SOT-23 surface mount package. Its capacity to handle significant drain currents and voltages makes it suitable for industrial and automotive contexts, ensuring consistent performance.

Features & Benefits

• Maximum continuous drain current of 2.5A

• Maximum drain-source voltage of 20V

• Minimal Rds(on) of 85 mΩ enhances power efficiency

• Qualified to AEC-Q101 for automotive applications

Applications

• Used in automotive power management systems

• Suitable for DC-DC converters in electronic devices

• Employed in motor control for efficient switching

• Ideal for power amplification in RF

What kind of protection does this offer against voltage spikes?

It is avalanche rated and can handle high energy pulses, providing protection in dynamic environments.

What is the significance of the low Rds(on) in this device?

A low on-state resistance improves power loss management and enhances efficiency, making it suitable for high-efficiency applications.

How can this be installed on a circuit board?

It can be soldered onto a PCB in the SOT-23 package, ensuring secure mounting for surface-mount technology applications.

What are the typical switching characteristics at the rated voltage?

The device displays quick turn-on and turn-off times, improving switching efficiency in high-speed applications.

Is this compatible with other components in automotive circuits?

Yes, it meets automotive standards and functions effectively with various devices in power management circuits.