Infineon OptiMOS 2 Type N-Channel MOSFET, 1.4 A, 20 V Enhancement, 3-Pin SC-70

RS Stock No.:: 166-0980
Mfr. Part No.:: BSS816NWH6327XTSA1
Manufacturer:: Infineon

Infineon OptiMOS 2 Type N-Channel MOSFET, 1.4 A, 20 V Enhancement, 3-Pin SC-70

This image is representative of the product range

Subtotal (1 reel of 3000 units)*

PHP12,150.00

(exc. VAT)

PHP13,620.00

(inc. VAT)

FREE delivery for orders over ₱3,000.00

In Stock

Plus 30,000 unit(s) shipping from August 10, 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit	Per Reel*
3000 +	PHP4.05	PHP12,150.00

*price indicative

RS Stock No.:: 166-0980
Mfr. Part No.:: BSS816NWH6327XTSA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	1.4A
	Maximum Drain Source Voltage Vds	20V
	Series	OptiMOS 2
	Package Type	SC-70
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	240mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	500mW
	Typical Gate Charge Qg @ Vgs	0.6nC
	Minimum Operating Temperature	-40°C
	Forward Voltage Vf	1.1V
	Maximum Operating Temperature	175°C
	Length	2mm
	Height	0.8mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 1.4A
	Maximum Drain Source Voltage Vds 20V
	Series OptiMOS 2
	Package Type SC-70
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 240mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 500mW
	Typical Gate Charge Qg @ Vgs 0.6nC
	Minimum Operating Temperature -40°C
	Forward Voltage Vf 1.1V
	Maximum Operating Temperature 175°C
	Length 2mm
	Height 0.8mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

COO (Country of Origin):: MY

Infineon OptiMOS 2 Series MOSFET, 20V Maximum Drain Source Voltage, 1.4A Maximum Continuous Drain Current - BSS816NWH6327XTSA1

This MOSFET is a compact N‑channel enhancement device designed for low-voltage switching in automotive and industrial electronic systems. It operates across an extended temperature range and is intended for surface-mount applications where a small footprint and modest power handling are required.

Features and Benefits:

• Low on-resistance 240 mΩ reduces conduction losses and heat
• Maximum drain current 1.4A enables moderate load switching
• Drain-source voltage rating 20V supports typical automotive rails
• Gate charge 0.6 nC allows faster gate drive and reduced switching loss
• Power dissipation 500 mW permits sustained operation under light load
• Gate-source limit 8V protects against excessive drive voltages

Applications

• Suitable for switch stages in automotive sensor modules
• Ideal for load switching in 12V auxiliary circuits
• Used with battery-management peripherals requiring a small footprint
• Can be used for signal‑level power control in infotainment systems
• Applicable to compact motor‑drive gate stages for low currents

What package suits high-density board layouts?

It is supplied in an SC-70 surface-mount package that minimises board area and supports automated placement.

How does it perform in elevated ambient temperatures?

The device is specified for operation from -40 °C up to 175 °C, allowing use in harsh thermal environments typical of under‑bonnet automotive locations.

What drive voltage range should be applied to the gate?

The maximum permissible gate‑to‑source voltage is 8V, so gate drivers should be selected to remain within this limit.

How does the device balance switching speed and gate drive energy?

With a typical gate charge of 0.6 nC it requires relatively low energy to switch, aiding efficiency in systems with repetitive transitions.