Infineon OptiMOS P Type P-Channel MOSFET, 310 mA, 20 V Enhancement, 3-Pin SC-70 BSS223PWH6327XTSA1

RS Stock No.:: 165-5861
Mfr. Part No.:: BSS223PWH6327XTSA1
Manufacturer:: Infineon

Infineon OptiMOS P Type P-Channel MOSFET, 310 mA, 20 V Enhancement, 3-Pin SC-70 BSS223PWH6327XTSA1

This image is representative of the product range

Subtotal (1 reel of 3000 units)*

PHP11,400.00

(exc. VAT)

PHP12,780.00

(inc. VAT)

FREE delivery for orders over ₱3,000.00

In Stock

9,000 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit	Per Reel*
3000 +	PHP3.80	PHP11,400.00

*price indicative

RS Stock No.:: 165-5861
Mfr. Part No.:: BSS223PWH6327XTSA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	310mA
	Maximum Drain Source Voltage Vds	20V
	Package Type	SC-70
	Series	OptiMOS P
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	2.1Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	12 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	250mW
	Typical Gate Charge Qg @ Vgs	0.5nC
	Forward Voltage Vf	-1V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	2mm
	Width	1.25 mm
	Height	0.8mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 310mA
	Maximum Drain Source Voltage Vds 20V
	Package Type SC-70
	Series OptiMOS P
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 2.1Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 12 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 250mW
	Typical Gate Charge Qg @ Vgs 0.5nC
	Forward Voltage Vf -1V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 2mm
	Width 1.25 mm
	Height 0.8mm
	Automotive Standard AEC-Q101

COO (Country of Origin):: CN

Infineon OptiMOS P Series MOSFET, 310 mA Maximum Continuous Drain Current, 250 mW Maximum Power Dissipation - BSS223PWH6327XTSA1

This MOSFET serves as a crucial element in electronic circuits, acting as a switch or amplifier in numerous applications. Its P-channel design and enhancement mode characteristics enable efficient current control in surface-mounted electronic systems. The component's high-temperature operation capability makes it suitable for automotive and industrial applications where performance in extreme conditions is essential.

Features & Benefits

• Enhances efficiency with low on-resistance of 1.2Ω

• Supports high-temperature operations up to 150°C

• Provides robust performance with a maximum voltage rating of 20V

• Suitable for high-speed switching with minimal delay times

• Complies with AEC-Q101 standards for automotive applications

• Delivers consistent operation with low gate charge characteristics

Applications

• Driving loads in automotive

• Utilised in battery management systems for electric vehicles

• Implemented in power management circuits for consumer electronics

• Employed in amplifiers for audio and electronic devices

• Applied in various automation systems requiring efficient switching

What is the maximum current the component can handle?

The maximum continuous drain current it can handle is 310mA at 25°C, ensuring dependable operation under specified conditions.

How is this component optimised for high-temperature environments?

It is designed to withstand operating temperatures up to +150°C, making it suitable for use in challenging applications.

What type of mounting does this transistor accommodate?

This component is intended for surface mount assembly, facilitating its integration into compact electronic systems.

Does it comply with any automotive standards?

Yes, it is qualified according to AEC-Q101, meeting stringent reliability standards for automotive applications.

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode

Avalanche rated

Low switching and conduction power losses

Pb-free lead plating; RoHS compliant

Standard packages

OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.