Infineon OptiMOS Type N-Channel MOSFET, 1.5 A, 20 V Enhancement, 3-Pin SC-70 BSS214NH6327XTSA1

RS Stock No.:: 165-5865
Mfr. Part No.:: BSS214NH6327XTSA1
Manufacturer:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 1.5 A, 20 V Enhancement, 3-Pin SC-70 BSS214NH6327XTSA1

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Subtotal (1 reel of 3000 units)*

PHP14,400.00

(exc. VAT)

PHP16,140.00

(inc. VAT)

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Shipping from January 25, 2027

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Units	Per Unit	Per Reel*
3000 +	PHP4.80	PHP14,400.00

*price indicative

RS Stock No.:: 165-5865
Mfr. Part No.:: BSS214NH6327XTSA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	1.5A
	Maximum Drain Source Voltage Vds	20V
	Package Type	SC-70
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	250mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.8V
	Typical Gate Charge Qg @ Vgs	0.8nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	12V
	Maximum Power Dissipation Pd	500mW
	Maximum Operating Temperature	150°C
	Height	0.8mm
	Width	1.25mm
	Length	2mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 1.5A
	Maximum Drain Source Voltage Vds 20V
	Package Type SC-70
	Series OptiMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 250mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.8V
	Typical Gate Charge Qg @ Vgs 0.8nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 12V
	Maximum Power Dissipation Pd 500mW
	Maximum Operating Temperature 150°C
	Height 0.8mm
	Width 1.25mm
	Length 2mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

COO (Country of Origin):: CN

Infineon OptiMOS Series MOSFET, 20V Maximum Drain Source Voltage, 1.5A Maximum Continuous Drain Current - BSS214NH6327XTSA1

This n-channel MOSFET is a compact surface-mount switch designed for low-voltage electronics and automotive applications. It operates as an enhancement-mode transistor to control current in power-management and signal-switching circuits while withstanding a wide temperature range suited to demanding environments.

Features and Benefits:

• Low drain-source resistance 250 mΩ reduces conduction losses
• Maximum drain current 1.5A supports moderate load currents
• Maximum drain-source voltage 20V enables low-voltage power stages
• Typical gate charge 0.8 nC allows faster switching transitions
• Maximum power dissipation 500 mW manages thermal loading in small footprints
• Maximum gate-source voltage 12V permits compatibility with common drive levels

Applications

• Suitable for DC-DC converter low-side switching
• Ideal for power distribution in automotive electronics
• Used with gate drivers requiring rapid switching response
• Can be used for load switching on compact PCBs
• Suitable for battery-powered device power management

What operating temperatures can it endure in harsh conditions?

It functions across a broad range from -55°C up to 150°C for high-temperature stability.

How does the package affect board population and assembly?

The SC-70 surface-mount package facilitates dense PCB layouts and automated pick-and-place assembly.

What electrical limit should designers observe for gate drive?

Do not exceed a gate-source voltage of 12V to avoid damaging the gate oxide.

How much vertical space should a designer allow for component clearance?

Allow for a component height of 0.8mm when planning enclosure and stacking constraints.