Infineon CoolMOS P6 Type N-Channel MOSFET, 53.5 A, 600 V Enhancement, 3-Pin TO-247 IPZ60R070P6FKSA1
- RS Stock No.:
- 214-9121
- Mfr. Part No.:
- IPZ60R070P6FKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
PHP1,203.98
(exc. VAT)
PHP1,348.46
(inc. VAT)
FREE delivery for orders over ₱3,000.00
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- Shipping from October 02, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | PHP601.99 | PHP1,203.98 |
| 10 - 98 | PHP551.875 | PHP1,103.75 |
| 100 - 248 | PHP509.76 | PHP1,019.52 |
| 250 - 498 | PHP473.455 | PHP946.91 |
| 500 + | PHP459.65 | PHP919.30 |
*price indicative
- RS Stock No.:
- 214-9121
- Mfr. Part No.:
- IPZ60R070P6FKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 53.5A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | CoolMOS P6 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 100nC | |
| Maximum Power Dissipation Pd | 391W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 16.13mm | |
| Width | 5.21 mm | |
| Height | 21.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 53.5A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series CoolMOS P6 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 100nC | ||
Maximum Power Dissipation Pd 391W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 16.13mm | ||
Width 5.21 mm | ||
Height 21.1mm | ||
Automotive Standard No | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.
Easy to use/drive due to driver source pin for better control of the gate
Qualified for industrial grade applications according to JEDEC
Related links
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- Infineon CoolMOS P6 Type N-Channel MOSFET & Diode 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS P6 Type N-Channel MOSFET & Diode 650 V Enhancement, 3-Pin TO-247 IPW60R099P6XKSA1
- Infineon CoolMOS P6 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IPW60R190P6FKSA1
- Infineon CoolMOS P6 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
