Infineon CoolMOS P6 Type N-Channel MOSFET & Diode, 109 A, 650 V Enhancement, 3-Pin TO-247 IPW60R099P6XKSA1
- RS Stock No.:
- 220-7457
- Mfr. Part No.:
- IPW60R099P6XKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
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Subtotal (1 pack of 2 units)*
PHP616.36
(exc. VAT)
PHP690.32
(inc. VAT)
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In Stock
- 240 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | PHP308.18 | PHP616.36 |
| 10 - 98 | PHP282.685 | PHP565.37 |
| 100 - 248 | PHP261.07 | PHP522.14 |
| 250 - 498 | PHP242.225 | PHP484.45 |
| 500 + | PHP235.575 | PHP471.15 |
*price indicative
- RS Stock No.:
- 220-7457
- Mfr. Part No.:
- IPW60R099P6XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 109A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | CoolMOS P6 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 70nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 278W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 16.13mm | |
| Height | 21.1mm | |
| Width | 5.21 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 109A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series CoolMOS P6 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 70nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 278W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 16.13mm | ||
Height 21.1mm | ||
Width 5.21 mm | ||
Automotive Standard No | ||
The Infineon's Cool MOS P6 super junction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. Cool MOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.
Reduced gate charge (Q g)
Higher V the
Good body diode ruggedness
Optimized integrated R g
Improved dv/dt from 50V/ns
Cool MOS™ quality with over 12 years manufacturing experience in super junction technology
Improved efficiency especially in light load condition
Better efficiency in soft switching applications due to earlier turn-off
Suitable for hard- & soft-switching topologies
Optimized balance of efficiency and ease of use and good controllability of switching behaviour
High robustness and better efficiency
Outstanding quality & reliability
Related links
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- Infineon CoolMOS P6 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IPW60R190P6FKSA1
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