Infineon CoolMOS P6 Type N-Channel MOSFET & Diode, 30 A, 650 V Enhancement, 5-Pin ThinPAK
- RS Stock No.:
- 220-7434
- Mfr. Part No.:
- IPL60R360P6SATMA1
- Manufacturer:
- Infineon
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Subtotal (1 reel of 5000 units)*
PHP244,985.00
(exc. VAT)
PHP274,385.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 5,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 5000 - 5000 | PHP48.997 | PHP244,985.00 |
| 10000 - 10000 | PHP47.527 | PHP237,635.00 |
| 15000 + | PHP46.101 | PHP230,505.00 |
*price indicative
- RS Stock No.:
- 220-7434
- Mfr. Part No.:
- IPL60R360P6SATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | ThinPAK | |
| Series | CoolMOS P6 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 89.3W | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.1 mm | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Length | 5.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type ThinPAK | ||
Series CoolMOS P6 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 89.3W | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Width 6.1 mm | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Length 5.1mm | ||
Automotive Standard No | ||
The Infineon new Cool MOS Thin PAK 5x6 is a leadless SMD package especially designed for high voltage MOSFETs. This new package has a very small footprint of 5x6mm 2 and a very low profile with only 1mm height. This significantly smaller package size in combination with its benchmark low parasitic inductances can be used as a new and effective way to decrease system solution size in power- density driven designs. The Thin PAK 5x6 package is characterized by a very low source inductance 1.6nH, as well as a similar thermal performance as DPAK. The package hence enables faster and thus more efficient switching of power MOSFETs and is easier to handle in terms of switching behaviour and EMI.
Extremely low losses due to very low FOMRdson*Qg and Eoss
Very high commutation ruggedness
Easy to use/drive
Pb-freeplating, Halogen free mold compound
Qualified for industrial grade applications according to JEDEC
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