Infineon CoolMOS P6 Type N-Channel MOSFET, 22.4 A, 600 V Enhancement, 5-Pin VSON IPL60R180P6AUMA1
- RS Stock No.:
- 214-9074
- Mfr. Part No.:
- IPL60R180P6AUMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP747.45
(exc. VAT)
PHP837.15
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 2,950 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP149.49 | PHP747.45 |
| 10 - 95 | PHP137.032 | PHP685.16 |
| 100 - 245 | PHP126.522 | PHP632.61 |
| 250 - 495 | PHP117.374 | PHP586.87 |
| 500 + | PHP114.064 | PHP570.32 |
*price indicative
- RS Stock No.:
- 214-9074
- Mfr. Part No.:
- IPL60R180P6AUMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 22.4A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | VSON | |
| Series | CoolMOS P6 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 176W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Minimum Operating Temperature | -40°C | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Width | 8.1 mm | |
| Length | 8.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 22.4A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type VSON | ||
Series CoolMOS P6 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 176W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Minimum Operating Temperature -40°C | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Width 8.1 mm | ||
Length 8.1mm | ||
Automotive Standard No | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.
Increased MOSFET dv/dt ruggedness
Easy to use/drive
Related links
- Infineon CoolMOS P6 Type N-Channel MOSFET 600 V Enhancement, 5-Pin VSON
- Infineon CoolMOS P6 Type N-Channel MOSFET 600 V Enhancement, 5-Pin VSON
- Infineon CoolMOS P6 Type N-Channel MOSFET 600 V Enhancement, 5-Pin VSON IPL60R210P6AUMA1
- Infineon CoolMOS P6 Type N-Channel MOSFET & Diode 650 V Enhancement, 5-Pin ThinPAK
- Infineon CoolMOS P6 Type N-Channel MOSFET & Diode 650 V Enhancement, 5-Pin ThinPAK IPL60R360P6SATMA1
- Infineon CoolMOS P6 Type N-Channel MOSFET 650 V Enhancement, 4-Pin TO-220
- Infineon CoolMOS P6 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- Infineon CoolMOS P6 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
