Infineon CoolMOS P6 Type N-Channel MOSFET, 22.4 A, 600 V Enhancement, 5-Pin VSON
- RS Stock No.:
- 214-9073
- Mfr. Part No.:
- IPL60R180P6AUMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
PHP291,459.00
(exc. VAT)
PHP326,433.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from October 05, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | PHP97.153 | PHP291,459.00 |
| 6000 - 6000 | PHP94.238 | PHP282,714.00 |
| 9000 + | PHP91.411 | PHP274,233.00 |
*price indicative
- RS Stock No.:
- 214-9073
- Mfr. Part No.:
- IPL60R180P6AUMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 22.4A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | CoolMOS P6 | |
| Package Type | VSON | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 176W | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -40°C | |
| Standards/Approvals | No | |
| Width | 8.1 mm | |
| Length | 8.1mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 22.4A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series CoolMOS P6 | ||
Package Type VSON | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 176W | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -40°C | ||
Standards/Approvals No | ||
Width 8.1 mm | ||
Length 8.1mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.
Increased MOSFET dv/dt ruggedness
Easy to use/drive
Related links
- Infineon CoolMOS P6 Type N-Channel MOSFET 600 V Enhancement, 5-Pin VSON IPL60R180P6AUMA1
- Infineon CoolMOS P6 Type N-Channel MOSFET 600 V Enhancement, 5-Pin VSON
- Infineon CoolMOS P6 Type N-Channel MOSFET 600 V Enhancement, 5-Pin VSON IPL60R210P6AUMA1
- Infineon CoolMOS P6 Type N-Channel MOSFET & Diode 650 V Enhancement, 5-Pin ThinPAK
- Infineon CoolMOS P6 Type N-Channel MOSFET & Diode 650 V Enhancement, 5-Pin ThinPAK IPL60R360P6SATMA1
- Infineon CoolMOS P6 Type N-Channel MOSFET 650 V Enhancement, 4-Pin TO-220
- Infineon CoolMOS P6 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- Infineon CoolMOS P6 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247