Infineon CoolMOS P6 Type N-Channel MOSFET, 19.2 A, 600 V Enhancement, 5-Pin VSON IPL60R210P6AUMA1

RS Stock No.:: 214-9076
Mfr. Part No.:: IPL60R210P6AUMA1
Manufacturer:: Infineon

Infineon CoolMOS P6 Type N-Channel MOSFET, 19.2 A, 600 V Enhancement, 5-Pin VSON IPL60R210P6AUMA1

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Subtotal (1 pack of 5 units)*

PHP1,005.63

(exc. VAT)

PHP1,126.305

(inc. VAT)

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In Stock

2,980 unit(s) ready to ship from another location

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Units	Per Unit	Per Pack*
5 - 5	PHP201.126	PHP1,005.63
10 - 95	PHP184.258	PHP921.29
100 - 245	PHP170.26	PHP851.30
250 - 495	PHP157.848	PHP789.24
500 +	PHP153.712	PHP768.56

*price indicative

RS Stock No.:: 214-9076
Mfr. Part No.:: IPL60R210P6AUMA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	19.2A
	Maximum Drain Source Voltage Vds	600V
	Series	CoolMOS P6
	Package Type	VSON
	Mount Type	Surface
	Pin Count	5
	Maximum Drain Source Resistance Rds	210mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.9V
	Minimum Operating Temperature	-40°C
	Maximum Power Dissipation Pd	151W
	Typical Gate Charge Qg @ Vgs	37nC
	Maximum Gate Source Voltage Vgs	20 V
	Width	8.1 mm
	Length	8.1mm
	Height	1.1mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 19.2A
	Maximum Drain Source Voltage Vds 600V
	Series CoolMOS P6
	Package Type VSON
	Mount Type Surface
	Pin Count 5
	Maximum Drain Source Resistance Rds 210mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.9V
	Minimum Operating Temperature -40°C
	Maximum Power Dissipation Pd 151W
	Typical Gate Charge Qg @ Vgs 37nC
	Maximum Gate Source Voltage Vgs 20 V
	Width 8.1 mm
	Length 8.1mm
	Height 1.1mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPL60R210P6AUMA1

600V CoolMOSªP6 Power Transistor

Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.

Summary of Features

Reduced gate charge (Q g)

Higher V th

Good body diode ruggedness

Optimized integrated R g

Improved dv/dt from 50V/ns

CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology

Benefits

Improved effciency especially in light load condition

Better efficiency in soft switching applications due to earlier turn-off

Suitable for hard- & soft-switching topologies

Optimized balance of efficiency and ease of use and good controllability of switching behavior

High robustness and better efficiency

Outstanding quality & reliability

Potential Applications

PFC stages for server, telecom rectifier, PC silverbox, gaming consoles

PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles