Infineon CoolMOS P6 Type N-Channel MOSFET, 23.8 A, 600 V Enhancement, 3-Pin TO-220 IPP60R160P6XKSA1
- RS Stock No.:
- 214-9093
- Mfr. Part No.:
- IPP60R160P6XKSA1
- Manufacturer:
- Infineon
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View bulk pricing optionsSubtotal (1 pack of 5 units)*
PHP860.18
(exc. VAT)
PHP963.40
(inc. VAT)
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- Plus 250 unit(s) shipping from August 31, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP172.036 | PHP860.18 |
| 10 - 95 | PHP157.626 | PHP788.13 |
| 100 - 245 | PHP145.656 | PHP728.28 |
| 250 - 495 | PHP135.238 | PHP676.19 |
| 500 + | PHP131.468 | PHP657.34 |
*price indicative
- RS Stock No.:
- 214-9093
- Mfr. Part No.:
- IPP60R160P6XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 23.8A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | CoolMOS P6 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 176W | |
| Length | 10.36mm | |
| Height | 9.45mm | |
| Width | 4.57mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 23.8A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series CoolMOS P6 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 176W | ||
Length 10.36mm | ||
Height 9.45mm | ||
Width 4.57mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon CoolMOS Series is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.
Easy to use/drive
Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22)
Very high commutation ruggedness
Related links
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- Infineon CoolMOS P6 Type N-Channel MOSFET & Diode 650 V Enhancement, 3-Pin TO-220
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- Infineon CoolMOS P6 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247