Infineon CoolMOS P6 Type N-Channel MOSFET, 23.8 A, 650 V Enhancement, 3-Pin TO-263 IPB60R160P6ATMA1
- RS Stock No.:
- 130-0894
- Mfr. Part No.:
- IPB60R160P6ATMA1
- Manufacturer:
- Infineon
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Subtotal (1 pack of 2 units)*
PHP375.98
(exc. VAT)
PHP421.10
(inc. VAT)
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In Stock
- 896 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | PHP187.99 | PHP375.98 |
| 10 - 98 | PHP182.355 | PHP364.71 |
| 100 - 498 | PHP176.885 | PHP353.77 |
| 500 - 998 | PHP171.585 | PHP343.17 |
| 1000 + | PHP166.435 | PHP332.87 |
*price indicative
- RS Stock No.:
- 130-0894
- Mfr. Part No.:
- IPB60R160P6ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 23.8A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Series | CoolMOS P6 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 176W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 9.45mm | |
| Length | 10.31mm | |
| Width | 4.57 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 23.8A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Series CoolMOS P6 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 176W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 9.45mm | ||
Length 10.31mm | ||
Width 4.57 mm | ||
Automotive Standard No | ||
Infineon CoolMOS™E6/P6 series Power MOSFET
The Infineon range of CoolMOS™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon CoolMOS P6 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- Infineon CoolMOS P6 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS P6 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 IPP60R160P6XKSA1
- Infineon CoolMOS P6 Type N-Channel MOSFET 650 V Enhancement, 4-Pin TO-220
- Infineon CoolMOS P6 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS P6 Type N-Channel MOSFET & Diode 650 V Enhancement, 5-Pin ThinPAK
- Infineon CoolMOS P6 Type N-Channel MOSFET & Diode 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS P6 Type N-Channel MOSFET & Diode 650 V Enhancement, 3-Pin TO-220