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Infineon OptiMOS Type N-Channel MOSFET, 180 A, 100 V N, 7-Pin TO-263 IPB017N10N5LFATMA1

RS Stock No.:: 214-4364
Mfr. Part No.:: IPB017N10N5LFATMA1
Manufacturer:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 180 A, 100 V N, 7-Pin TO-263 IPB017N10N5LFATMA1

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Subtotal (1 pack of 2 units)*

PHP752.40

(exc. VAT)

PHP842.68

(inc. VAT)

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In Stock

Plus 1,662 unit(s) shipping from February 09, 2026

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Units	Per Unit	Per Pack*
2 - 8	PHP376.20	PHP752.40
10 - 98	PHP344.85	PHP689.70
100 - 248	PHP318.475	PHP636.95
250 - 498	PHP295.58	PHP591.16
500 +	PHP287.615	PHP575.23

*price indicative

RS Stock No.:: 214-4364
Mfr. Part No.:: IPB017N10N5LFATMA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	180A
	Maximum Drain Source Voltage Vds	100V
	Series	OptiMOS
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	1.7mΩ
	Channel Mode	N
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	313W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	195nC
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Width	9.45 mm
	Standards/Approvals	No
	Height	4.57mm
	Length	10.31mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 180A
	Maximum Drain Source Voltage Vds 100V
	Series OptiMOS
	Package Type TO-263
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 1.7mΩ
	Channel Mode N
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 313W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 195nC
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Width 9.45 mm
	Standards/Approvals No
	Height 4.57mm
	Length 10.31mm
	Automotive Standard No

IPB017N10N5LFATMA1 Datasheet

Combining a low RDS(on) with a wide safe operating area (SOA)

OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.

Summary of Features

•Combination of low R DS(on) and wide safe operating area (SOA)

•High max. pulse current

•High continuous pulse current

Benefits

•Rugged linear mode operation

•Low conduction losses

•Higher in-rush current enabled for faster start-up and shorter down time

Potential Applications

•Telecom

•Battery management