onsemi NTH Type N-Channel MOSFET, 29 A, 1200 V Enhancement, 3-Pin TO-247

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Subtotal (1 tube of 450 units)*

PHP207,532.80

(exc. VAT)

PHP232,436.70

(inc. VAT)

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Units
Per Unit
Per Tube*
450 +PHP461.184PHP207,532.80

*price indicative

RS Stock No.:
202-5706
Mfr. Part No.:
NTHL160N120SC1
Manufacturer:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

1200V

Series

NTH

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

110mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

34nC

Maximum Power Dissipation Pd

119W

Maximum Gate Source Voltage Vgs

25 V

Maximum Operating Temperature

175°C

Height

20.82mm

Length

15.87mm

Standards/Approvals

RoHS

Width

4.82 mm

Automotive Standard

No

Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-3L


The ON Semiconductor Silicon Carbide Power MOSFET runs with 17 Ampere and 1200 Volts. It can be used in uninterruptible power supply, DC/DC Converter, boost inverter.

160mO drain to source on resistance

Ultra low gate charge

100% avalanche tested

Pb free

RoHS compliant

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