onsemi NTH Type N-Channel MOSFET & Diode, 31 A, 1200 V Enhancement, 3-Pin TO-247 NTHL080N120SC1A
- RS Stock No.:
- 205-2502
- Mfr. Part No.:
- NTHL080N120SC1A
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
PHP657.92
(exc. VAT)
PHP736.87
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- Final 324 unit(s), ready to ship from another location
Units | Per Unit |
|---|---|
| 1 - 9 | PHP657.92 |
| 10 - 24 | PHP644.75 |
| 25 - 49 | PHP631.87 |
| 50 - 224 | PHP619.23 |
| 225 + | PHP606.84 |
*price indicative
- RS Stock No.:
- 205-2502
- Mfr. Part No.:
- NTHL080N120SC1A
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | NTH | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 110mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 4V | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 178W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 4.48mm | |
| Length | 39.75mm | |
| Width | 15.37 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series NTH | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 110mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 4V | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 178W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 4.48mm | ||
Length 39.75mm | ||
Width 15.37 mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L
The ON Semiconductor NTH series SiC N-channel 1200V MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Continuous Drain Current rating is 31A
Drain to source on resistance rating is 110mohm
High speed switching and low capacitance
100% UIL tested
Low effective output capacitance
Package type is TO-247-3LD
Related links
- onsemi NTH Type N-Channel MOSFET & Diode 1200 V Enhancement, 3-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-247 NTHL060N065SC1
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-247 NTHL025N065SC1
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-247 NTHL160N120SC1
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-247