onsemi NTH Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 4-Pin TO-247

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RS Stock No.:
202-5704
Mfr. Part No.:
NTHL040N120SC1
Manufacturer:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

1200V

Package Type

TO-247

Series

NTH

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

56mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

106nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

25 V

Maximum Power Dissipation Pd

348W

Maximum Operating Temperature

175°C

Length

20.25mm

Width

4.82 mm

Height

15.87mm

Standards/Approvals

No

Automotive Standard

No

Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-3L


The ON Semiconductor Silicon Carbide Power MOSFET runs with 60 Ampere and 1200 Volts. It can be used in uninterruptible power supply, DC/DC Converter, boost inverter.

40mO drain to source on resistance

Ultra low gate charge

100% avalanche tested

Pb free

RoHS compliant

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