onsemi NTH Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 4-Pin TO-247 NTHL040N120SC1
- RS Stock No.:
- 202-5705
- Mfr. Part No.:
- NTHL040N120SC1
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
PHP2,146.59
(exc. VAT)
PHP2,404.18
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Supply shortage
- Plus 422 left, shipping from December 26, 2025
Our current stock is limited and our suppliers are expecting shortages.
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 48 | PHP1,073.295 | PHP2,146.59 |
| 50 - 98 | PHP1,003.88 | PHP2,007.76 |
| 100 - 198 | PHP912.455 | PHP1,824.91 |
| 200 + | PHP836.345 | PHP1,672.69 |
*price indicative
- RS Stock No.:
- 202-5705
- Mfr. Part No.:
- NTHL040N120SC1
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | NTH | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 56mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 348W | |
| Typical Gate Charge Qg @ Vgs | 106nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 20.25mm | |
| Width | 4.82 mm | |
| Height | 15.87mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series NTH | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 56mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 348W | ||
Typical Gate Charge Qg @ Vgs 106nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 20.25mm | ||
Width 4.82 mm | ||
Height 15.87mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-3L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 60 Ampere and 1200 Volts. It can be used in uninterruptible power supply, DC/DC Converter, boost inverter.
40mO drain to source on resistance
Ultra low gate charge
100% avalanche tested
Pb free
RoHS compliant
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