onsemi NTH Type N-Channel MOSFET & Diode, 31 A, 1200 V Enhancement, 3-Pin TO-247
- RS Stock No.:
- 205-2501
- Mfr. Part No.:
- NTHL080N120SC1A
- Manufacturer:
- onsemi
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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 205-2501
- Mfr. Part No.:
- NTHL080N120SC1A
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | NTH | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 110mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 178W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Forward Voltage Vf | 4V | |
| Maximum Operating Temperature | 150°C | |
| Width | 15.37 mm | |
| Height | 4.48mm | |
| Length | 39.75mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series NTH | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 110mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 178W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Forward Voltage Vf 4V | ||
Maximum Operating Temperature 150°C | ||
Width 15.37 mm | ||
Height 4.48mm | ||
Length 39.75mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L
The ON Semiconductor NTH series SiC N-channel 1200V MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Continuous Drain Current rating is 31A
Drain to source on resistance rating is 110mohm
High speed switching and low capacitance
100% UIL tested
Low effective output capacitance
Package type is TO-247-3LD
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