onsemi NTH Type N-Channel MOSFET, 29 A, 1200 V Enhancement, 4-Pin TO-247 NTH4L080N120SC1
- RS Stock No.:
- 202-5701
- Mfr. Part No.:
- NTH4L080N120SC1
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
PHP1,254.00
(exc. VAT)
PHP1,404.48
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- Final 446 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 48 | PHP627.00 | PHP1,254.00 |
| 50 - 98 | PHP608.19 | PHP1,216.38 |
| 100 - 198 | PHP583.865 | PHP1,167.73 |
| 200 + | PHP554.67 | PHP1,109.34 |
*price indicative
- RS Stock No.:
- 202-5701
- Mfr. Part No.:
- NTH4L080N120SC1
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | NTH | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 110mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 170W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 15.2mm | |
| Width | 5.2 mm | |
| Height | 22.74mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series NTH | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 110mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 170W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 15.2mm | ||
Width 5.2 mm | ||
Height 22.74mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 29 Ampere and 1200 Volts. It can be used in uninterruptible power supply, Boost inverter, Industrial Motor Drive, PV Charger.
110mO drain to source on resistance
Ultra low gate charge
100% avalanche tested
Pb free
RoHS compliant
Related links
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-247 NTHL160N120SC1
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247 NTH4L060N065SC1