STMicroelectronics STD Type N-Channel MOSFET, 10 A, 480 V Depletion, 3-Pin TO-252 STD13N60M6
- RS Stock No.:
- 202-4809
- Mfr. Part No.:
- STD13N60M6
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP532.82
(exc. VAT)
PHP596.76
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 1,950 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 45 | PHP106.564 | PHP532.82 |
| 50 - 95 | PHP103.366 | PHP516.83 |
| 100 - 245 | PHP99.232 | PHP496.16 |
| 250 - 995 | PHP94.272 | PHP471.36 |
| 1000 + | PHP88.616 | PHP443.08 |
*price indicative
- RS Stock No.:
- 202-4809
- Mfr. Part No.:
- STD13N60M6
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 480V | |
| Series | STD | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 380mΩ | |
| Channel Mode | Depletion | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 92W | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 2.4 mm | |
| Length | 6.6mm | |
| Height | 10.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 480V | ||
Series STD | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 380mΩ | ||
Channel Mode Depletion | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 92W | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 2.4 mm | ||
Length 6.6mm | ||
Height 10.1mm | ||
Automotive Standard No | ||
The STMicroelectronics N-channel MDmesh M6 Power MOSFET in a DPAK package has reduced switching losses. It also has lower RDS(on) per area vs previous generation.
100% avalanche tested
Zener-protected
Related links
- STMicroelectronics STD Type N-Channel MOSFET 480 V Depletion, 3-Pin TO-252
- STMicroelectronics STD Type N-Channel MOSFET 35 V Enhancement, 3-Pin TO-252
- STMicroelectronics STD Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252
- STMicroelectronics STD Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 STD86N3LH5
- STMicroelectronics STD Type N-Channel MOSFET 35 V Enhancement, 3-Pin TO-252 STD80N240K6
- Microchip DN2625 Type N-Channel MOSFET 3-Pin TO-252 DN2625K4-G
- Microchip DN2470 Type N-Channel RF MOSFET 700 V Depletion, 3-Pin TO-252 DN2470K4-G
- ROHM RD3G08CBLHRB Type N-Channel MOSFET 40 V Depletion, 3-Pin TO-252 RD3G08CBLHRBTL
