STMicroelectronics ST Type N-Channel MOSFET, 68 A, 650 V Depletion, 3-Pin TO-247 STW70N65DM6
- RS Stock No.:
- 202-5547
- Mfr. Part No.:
- STW70N65DM6
- Manufacturer:
- STMicroelectronics
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Units | Per Unit |
|---|---|
| 1 - 4 | PHP781.28 |
| 5 - 9 | PHP766.09 |
| 10 + | PHP717.67 |
*price indicative
- RS Stock No.:
- 202-5547
- Mfr. Part No.:
- STW70N65DM6
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 68A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | ST | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.036Ω | |
| Channel Mode | Depletion | |
| Typical Gate Charge Qg @ Vgs | 125nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 450W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 15.9mm | |
| Height | 41.2mm | |
| Width | 5.1 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 68A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series ST | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.036Ω | ||
Channel Mode Depletion | ||
Typical Gate Charge Qg @ Vgs 125nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 450W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 15.9mm | ||
Height 41.2mm | ||
Width 5.1 mm | ||
Automotive Standard No | ||
The STMicroelectronics N-channel Power MOSFET is part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market.
100% avalanche tested
Zener-protected
Related links
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