STMicroelectronics ST Type N-Channel MOSFET, 68 A, 650 V Depletion, 3-Pin TO-247
- RS Stock No.:
- 202-5548
- Mfr. Part No.:
- STW70N65DM6-4
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
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Subtotal (1 tube of 30 units)*
PHP21,728.79
(exc. VAT)
PHP24,336.24
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 600 unit(s) shipping from May 13, 2026
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Units | Per Unit | Per Tube* |
|---|---|---|
| 30 - 90 | PHP724.293 | PHP21,728.79 |
| 120 - 240 | PHP709.807 | PHP21,294.21 |
| 270 - 570 | PHP695.611 | PHP20,868.33 |
| 600 - 1170 | PHP681.699 | PHP20,450.97 |
| 1200 + | PHP668.065 | PHP20,041.95 |
*price indicative
- RS Stock No.:
- 202-5548
- Mfr. Part No.:
- STW70N65DM6-4
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 68A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | ST | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.036Ω | |
| Channel Mode | Depletion | |
| Typical Gate Charge Qg @ Vgs | 125nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 450W | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.9mm | |
| Standards/Approvals | No | |
| Width | 5.1 mm | |
| Height | 41.2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 68A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series ST | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.036Ω | ||
Channel Mode Depletion | ||
Typical Gate Charge Qg @ Vgs 125nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 450W | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Length 15.9mm | ||
Standards/Approvals No | ||
Width 5.1 mm | ||
Height 41.2mm | ||
Automotive Standard No | ||
The STMicroelectronics N-channel Power MOSFET is part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market.
100% avalanche tested
Zener-protected
Related links
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- STMicroelectronics ST Type N-Channel MOSFET 600 V Depletion, 3-Pin TO-247
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