Microchip DN2470 Type N-Channel RF MOSFET, 170 mA, 700 V Depletion, 3-Pin TO-252 DN2470K4-G
- RS Stock No.:
- 598-941
- Mfr. Part No.:
- DN2470K4-G
- Manufacturer:
- Microchip
N
Subtotal (1 reel of 2000 units)*
PHP124,132.00
(exc. VAT)
PHP139,028.00
(inc. VAT)
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- Shipping from April 10, 2026
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Units | Per Unit | Per Reel* |
|---|---|---|
| 2000 + | PHP62.066 | PHP124,132.00 |
*price indicative
- RS Stock No.:
- 598-941
- Mfr. Part No.:
- DN2470K4-G
- Manufacturer:
- Microchip
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Product Type | RF MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 170mA | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | DN2470 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.94in | |
| Width | 0.265 in | |
| Length | 0.245in | |
| Standards/Approvals | RoHS-compliant | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Product Type RF MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 170mA | ||
Maximum Drain Source Voltage Vds 700V | ||
Series DN2470 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 0.94in | ||
Width 0.265 in | ||
Length 0.245in | ||
Standards/Approvals RoHS-compliant | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Microchip Low threshold depletion-mode transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FET is ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
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