Vishay TrenchFET Gen IV Type N-Channel MOSFET, 110 A, 45 V Enhancement, 8-Pin SO-8

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Subtotal (1 pack of 50 units)*

PHP2,410.80

(exc. VAT)

PHP2,700.10

(inc. VAT)

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Units
Per Unit
Per Pack*
50 - 50PHP48.216PHP2,410.80
100 - 450PHP43.848PHP2,192.40
500 - 950PHP40.188PHP2,009.40
1000 - 1450PHP37.089PHP1,854.45
1500 +PHP34.453PHP1,722.65

*price indicative

RS Stock No.:
200-6845
Mfr. Part No.:
SIR150DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

45V

Series

TrenchFET Gen IV

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.97mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

65.7W

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

70nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

5.15mm

Height

6.15mm

Width

5.15 mm

Automotive Standard

No

The Vishay SIR150DP-T1-RE3 is a N-channel 45V (D-S) MOSFET.

TrenchFET Gen IV power MOSFET

45 V Drain-source break-down voltage

Tuned for low Qg and Qoss

100 % Rg and UIS tested

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