Vishay TrenchFET Gen IV Type N-Channel MOSFET, 110 A, 45 V Enhancement, 8-Pin SO-8

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 50 units)*

PHP2,410.80

(exc. VAT)

PHP2,700.10

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from July 27, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Pack*
50 - 50PHP48.216PHP2,410.80
100 - 450PHP43.848PHP2,192.40
500 - 950PHP40.188PHP2,009.40
1000 - 1450PHP37.089PHP1,854.45
1500 +PHP34.453PHP1,722.65

*price indicative

RS Stock No.:
200-6845
Mfr. Part No.:
SIR150DP-T1-RE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

45V

Package Type

SO-8

Series

TrenchFET Gen IV

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.97mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

65.7W

Typical Gate Charge Qg @ Vgs

70nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

6.15mm

Length

5.15mm

Width

5.15 mm

Automotive Standard

No

The Vishay SIR150DP-T1-RE3 is a N-channel 45V (D-S) MOSFET.

TrenchFET Gen IV power MOSFET

45 V Drain-source break-down voltage

Tuned for low Qg and Qoss

100 % Rg and UIS tested

Related links