Vishay TrenchFET Gen IV Type N-Channel MOSFET, 81 A, 100 V Enhancement, 8-Pin SO-8

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Subtotal (1 pack of 25 units)*

PHP2,508.80

(exc. VAT)

PHP2,809.85

(inc. VAT)

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Units
Per Unit
Per Pack*
25 - 75PHP100.352PHP2,508.80
100 - 475PHP91.222PHP2,280.55
500 - 975PHP83.633PHP2,090.83
1000 - 1475PHP77.201PHP1,930.03
1500 +PHP71.692PHP1,792.30

*price indicative

RS Stock No.:
200-6862
Mfr. Part No.:
SiR104ADP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

81A

Maximum Drain Source Voltage Vds

100V

Series

TrenchFET Gen IV

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

7.2mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

100W

Typical Gate Charge Qg @ Vgs

70nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

5.15mm

Height

6.15mm

Width

5.15 mm

Automotive Standard

No

The Vishay SiR104ADP-T1-RE3 is a N-channel 100V (D-S) MOSFET.

TrenchFET Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

100 % Rg and UIS tested

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