Vishay TrenchFET Gen IV Type N-Channel MOSFET, 65.8 A, 100 V Enhancement, 8-Pin SO-8

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Subtotal (1 pack of 25 units)*

PHP1,920.80

(exc. VAT)

PHP2,151.30

(inc. VAT)

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Units
Per Unit
Per Pack*
25 - 75PHP76.832PHP1,920.80
100 - 475PHP69.872PHP1,746.80
500 - 975PHP64.04PHP1,601.00
1000 - 1475PHP59.101PHP1,477.53
1500 +PHP54.902PHP1,372.55

*price indicative

RS Stock No.:
200-6865
Mfr. Part No.:
SiR106ADP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

65.8A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

TrenchFET Gen IV

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

9mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

52nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

83.3W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Width

5.15 mm

Length

5.15mm

Height

6.15mm

Standards/Approvals

No

Automotive Standard

No

The Vishay SiR106ADP-T1-RE3 is a N-channel 100V (D-S) MOSFET.

TrenchFET Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

100 % Rg and UIS tested

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