Vishay TrenchFET Gen IV Type N-Channel MOSFET, 11 A, 45 V Enhancement, 4-Pin SO-8

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 25 units)*

PHP1,588.075

(exc. VAT)

PHP1,778.65

(inc. VAT)

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later

Units
Per Unit
Per Pack*
25 - 75PHP63.523PHP1,588.08
100 - 475PHP57.776PHP1,444.40
500 - 975PHP52.959PHP1,323.98
1000 - 1475PHP48.892PHP1,222.30
1500 +PHP45.399PHP1,134.98

*price indicative

RS Stock No.:
200-6843
Mfr. Part No.:
SIJ150DP-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

45V

Series

TrenchFET Gen IV

Package Type

SO-8

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

4.1mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

65.7W

Typical Gate Charge Qg @ Vgs

70nC

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

3.4mm

Standards/Approvals

No

Height

3.4mm

Automotive Standard

No

The Vishay SIJ150DP-T1-GE3 is a N-channel 45V (D-S) MOSFET.

TrenchFET Gen IV power MOSFET

Very low Qg and Qoss reduce power loss and improve efficiency

Flexible leads provide resilience to mechanical stress

100 % Rg and UIS tested

Qgd/Qgs ratio < 1 optimizes switching characteristics

Related links