Vishay TrenchFET Gen IV Type N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK 1212-8 SIS476DN-T1-GE3

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Subtotal (1 pack of 10 units)*

PHP649.60

(exc. VAT)

PHP727.60

(inc. VAT)

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Units
Per Unit
Per Pack*
10 - 40PHP64.96PHP649.60
50 - 90PHP58.464PHP584.64
100 - 490PHP52.618PHP526.18
500 - 990PHP47.357PHP473.57
1000 +PHP42.622PHP426.22

*price indicative

Packaging Options:
RS Stock No.:
180-7743
Mfr. Part No.:
SIS476DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK 1212-8

Series

TrenchFET Gen IV

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0035Ω

Typical Gate Charge Qg @ Vgs

51nC

Maximum Power Dissipation Pd

52W

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

1.12mm

Standards/Approvals

RoHS 2002/95/EC, IEC 61249-2-21

Length

3.61mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay SIS476DN is a N-channel MOSFET having drain to source(Vds) voltage of 30V. The gate to source voltage(VGS) is 20V. It is having Power PAK 1212-8 package. It offers drain to source resistance (RDS.) 0.0025ohms at 10VGS and 0.0035ohms at 4.5VGS. Maximum drain current 40A.

Trench FET gen IV power MOSFET

100 % Rg and UIS tested

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