Vishay SiHD2N80AE Type N-Channel MOSFET, 2.9 A, 800 V Enhancement, 3-Pin TO-252 SIHD2N80AE-GE3

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Subtotal (1 pack of 10 units)*

PHP458.64

(exc. VAT)

PHP513.68

(inc. VAT)

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Units
Per Unit
Per Pack*
10 - 40PHP45.864PHP458.64
50 - 90PHP44.488PHP444.88
100 - 490PHP42.709PHP427.09
500 - 990PHP40.574PHP405.74
1000 +PHP38.139PHP381.39

*price indicative

Packaging Options:
RS Stock No.:
188-4982
Distrelec Article No.:
304-38-847
Mfr. Part No.:
SIHD2N80AE-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

2.9A

Maximum Drain Source Voltage Vds

800V

Series

SiHD2N80AE

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2.9Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

62.5W

Typical Gate Charge Qg @ Vgs

7nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

6.22 mm

Length

6.73mm

Height

2.25mm

Automotive Standard

No

E Series Power MOSFET.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Ciss)

Reduced switching and conduction losses

APPLICATIONS

Server and telecom power supplies

Switch mode power supplies (SMPS)

Power factor correction power supplies (PFC)

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