Infineon SIPMOS Type N-Channel MOSFET, 2.9 A, 60 V Enhancement, 3-Pin SOT-223 BSP320SH6327XTSA1
- RS Stock No.:
- 753-2810
- Mfr. Part No.:
- BSP320SH6327XTSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tape of 10 units)*
PHP359.10
(exc. VAT)
PHP402.20
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- 50 left, ready to ship from another location
- Final 300 unit(s) shipping from January 02, 2026
Units | Per Unit | Per Tape* |
|---|---|---|
| 10 - 10 | PHP35.91 | PHP359.10 |
| 20 - 40 | PHP34.832 | PHP348.32 |
| 50 - 90 | PHP32.743 | PHP327.43 |
| 100 - 190 | PHP29.796 | PHP297.96 |
| 200 + | PHP26.221 | PHP262.21 |
*price indicative
- RS Stock No.:
- 753-2810
- Mfr. Part No.:
- BSP320SH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.9A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SIPMOS | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.95V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.8W | |
| Typical Gate Charge Qg @ Vgs | 9.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 6.5mm | |
| Width | 3.5 mm | |
| Height | 1.6mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.9A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SIPMOS | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.95V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.8W | ||
Typical Gate Charge Qg @ Vgs 9.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 6.5mm | ||
Width 3.5 mm | ||
Height 1.6mm | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
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