Vishay TrenchFET Type N-Channel Power MOSFET, 2.9 A, 20 V Enhancement, 3-Pin SOT-23 SI2302DDS-T1-GE3

This image is representative of the product range

View all MOSFETs

Subtotal (1 pack of 25 units)*

PHP450.80

(exc. VAT)

PHP504.90

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • 100 left, ready to ship from another location
  • Final 75 unit(s) shipping from January 02, 2026
Units
Per Unit
Per Pack*
25 +PHP18.032PHP450.80

*price indicative

Packaging Options:
RS Stock No.:
152-6358
Mfr. Part No.:
SI2302DDS-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

2.9A

Maximum Drain Source Voltage Vds

20V

Package Type

SOT-23

Series

TrenchFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.075Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

3.5nC

Maximum Power Dissipation Pd

0.86W

Maximum Gate Source Voltage Vgs

±8 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

IEC 61249-2-21, RoHS

Height

1.02mm

Length

3.04mm

Width

1.4 mm

Automotive Standard

No

Halogen-free

TrenchFET® Power MOSFET

100 % Rg Tested

APPLICATIONS

Load Switching for Portable Devices

DC/DC Converter

Related links