Vishay TrenchFET N-Channel Power MOSFET, 2.9 A, 20 V Enhancement, 3-Pin SOT-23 SI2302DDS-T1-GE3

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Subtotal (1 pack of 25 units)*

PHP518.43

(exc. VAT)

PHP580.63

(inc. VAT)

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Units
Per Unit
Per Pack*
25 +PHP20.737PHP518.43

*price indicative

Packaging Options:
RS Stock No.:
152-6358
Mfr. Part No.:
SI2302DDS-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Power MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

2.9A

Maximum Drain Source Voltage Vds

20V

Package Type

SOT-23

Series

TrenchFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.075Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

3.5nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

8V

Maximum Power Dissipation Pd

0.71W

Maximum Operating Temperature

150°C

Standards/Approvals

IEC 61249-2-21, RoHS

Height

1.02mm

Length

3.04mm

Width

1.4mm

Automotive Standard

No

Halogen-free

TrenchFET® Power MOSFET

100 % Rg Tested

APPLICATIONS

Load Switching for Portable Devices

DC/DC Converter

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