onsemi Dual 2 Type N-Channel MOSFET, 1 A, 100 V, 6-Pin TSOT-23 FDC3601N
- RS Stock No.:
- 186-8997
- Mfr. Part No.:
- FDC3601N
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
PHP741.00
(exc. VAT)
PHP830.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 2,450 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 25 | PHP29.64 | PHP741.00 |
| 50 - 75 | PHP29.219 | PHP730.48 |
| 100 - 225 | PHP22.112 | PHP552.80 |
| 250 - 975 | PHP18.902 | PHP472.55 |
| 1000 + | PHP18.632 | PHP465.80 |
*price indicative
- RS Stock No.:
- 186-8997
- Mfr. Part No.:
- FDC3601N
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TSOT-23 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 550mΩ | |
| Typical Gate Charge Qg @ Vgs | 3.7nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.96W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.1mm | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Width | 3 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TSOT-23 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 550mΩ | ||
Typical Gate Charge Qg @ Vgs 3.7nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.96W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Length 3.1mm | ||
Height 1mm | ||
Standards/Approvals No | ||
Width 3 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
These N-Channel 100V specified MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
1.0 A, 100 V
RDS(on) = 500 mΩ@ VGS = 10 V
RDS(on) = 550 mΩ @ VGS = 6 V
Low gate charge (3.7nC typical)
Fast switching speed
High performance trench technology for extremely low RDS(ON)
SuperSOT™-6 package: small footprint 72%(smaller than standard SO-8), low profile (1mm thick)
Applications
This product is general usage and suitable for many different applications.
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