onsemi Dual 2 Type N-Channel Power MOSFET, 25 A, 80 V Enhancement, 8-Pin DFN NVMFD6H852NLWFT1G

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 30 units)*

PHP1,422.96

(exc. VAT)

PHP1,593.72

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • Final 1,500 unit(s), ready to ship from another location
Units
Per Unit
Per Pack*
30 - 270PHP47.432PHP1,422.96
300 - 720PHP46.009PHP1,380.27
750 +PHP44.629PHP1,338.87

*price indicative

Packaging Options:
RS Stock No.:
195-2556
Mfr. Part No.:
NVMFD6H852NLWFT1G
Manufacturer:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

80V

Package Type

DFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

31.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

3.2W

Typical Gate Charge Qg @ Vgs

10nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.8V

Minimum Operating Temperature

175°C

Maximum Operating Temperature

-55°C

Transistor Configuration

Dual

Length

6.1mm

Standards/Approvals

No

Height

1.05mm

Width

5.1 mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

Small Footprint (5x6 mm) for Compact Design

Low RDS(on) to Minimize Conduction Losses

Low QG and Capacitance to Minimize Driver Losses

NVMFD6H852NLWF − Wettable Flank Option for Enhanced Optical Inspection

PPAP Capable

These Devices are Pb−Free

Related links